Cree C3M0120065K

Package / Case

TO-247-4

RoHS

Details

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

22 A

Rds On - Drain-Source Resistance

120 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

28 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Pd - Power Dissipation

98 W

Channel Mode

Enhancement

Forward Transconductance - Min

5 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

19 ns

Typical Turn-On Delay Time

8 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

11 ns

Transistor Type

1 N-Channel

Product

MOSFET

Height

23.6 mm

Length

16.13 mm

Width

5.21 mm