Cree C3M0120065J

Package / Case

TO-263-7

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

21 A

Rds On - Drain-Source Resistance

120 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 15 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

26 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Pd - Power Dissipation

86 W

Channel Mode

Enhancement

Forward Transconductance - Min

5 S

Moisture Sensitive

Yes

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

18 ns

Typical Turn-On Delay Time

8 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

9 ns

Transistor Type

1 N-Channel

Product

MOSFET

Height

9.13 mm

Length

10.23 mm

Width

4.57 mm