Central Semiconductor Corp CTLDM303N-M832DS TR

Factory Lead Time

6 Weeks

Mounting Type

Surface Mount

Package / Case

8-TDFN Exposed Pad

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.6A

Number of Elements

2

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape (CT)

Published

2014

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

HTS Code

HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

8541.29.00.95

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

NO LEAD

Reach Compliance Code

compliant

JESD-30 Code

R-PDSO-N8

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Power - Max

1.65W

FET Type

2 N-Channel (Dual)

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

40m Ω @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Drain to Source Voltage (Vdss)

30V

Drain Current-Max (Abs) (ID)

3.6A

Drain-source On Resistance-Max

0.078Ohm

DS Breakdown Voltage-Min

30V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Standard