BIDW30N60T

Bourns Inc. BIDW30N60T

Part No:

BIDW30N60T

Manufacturer:

Bourns Inc.

Datasheet:

-

Package:

TO-247-3

AINNX NO:

28809363-BIDW30N60T

Description:

IGBT 600V 30A TRENCH TO-247

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Mfr
    Bourns Inc.
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    60 A
  • Test Conditions
    400V, 30A, 10Ohm, 15V
  • Base Product Number
    BIDW30N
  • Maximum Gate Emitter Voltage
    ±20V
  • Package Type
    TO-247
  • Maximum Collector Emitter Voltage
    600 V
  • Pd - Power Dissipation
    230 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    600
  • Mounting Styles
    Through Hole
  • Manufacturer
    Bourns
  • Brand
    Bourns
  • Continuous Collector Current Ic Max
    60 A
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    600 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Subcategory
    IGBTs
  • Technology
    Si
  • Configuration
    Single Diode
  • Input Type
    Standard
  • Power - Max
    230 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    1.65V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    76 nC
  • Current - Collector Pulsed (Icm)
    90 A
  • Td (on/off) @ 25°C
    30ns/67ns
  • Switching Energy
    1.85mJ (on), 450μJ (off)
  • Reverse Recovery Time (trr)
    40 ns
  • Product Category

    a particular group of related products.

    IGBT Transistors
0 Similar Products Remaining