2N3440E3

Atmel (Microchip Technology) 2N3440E3

Part No:

2N3440E3

Datasheet:

-

Package:

TO-39-3

AINNX NO:

31079981-2N3440E3

Description:

Bipolar Transistors - BJT Power BJT

Products specifications
  • Package / Case
    TO-39-3
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Transistor Polarity
    NPN
  • Collector- Emitter Voltage VCEO Max
    250 V
  • Emitter- Base Voltage VEBO
    7 V
  • Pd - Power Dissipation
    800 mW
  • Gain Bandwidth Product fT
    -
  • Minimum Operating Temperature
    - 65 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    40
  • DC Current Gain hFE Max
    160
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Configuration
    Single
  • Collector Base Voltage (VCBO)
    300 V
  • Continuous Collector Current
    1 A
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