MAX2602ESA+

Analog Devices MAX2602ESA+

Part No:

MAX2602ESA+

Manufacturer:

Analog Devices

Datasheet:

Package:

8-SOIC (0.154, 3.90mm Width) Exposed Pad

AINNX NO:

42551349-MAX2602ESA+

Description:

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Products specifications
  • Mount
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width) Exposed Pad
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Supplier Device Package
    8-SOIC-EP
  • Weight
    540.001716 mg
  • Collector-Emitter Breakdown Voltage
    15 V
  • hFEMin
    100
  • RoHS
    Compliant
  • MSL
    MSL 1 - Unlimited
  • Product Status
    Obsolete
  • Mfr
    Analog Devices Inc./Maxim Integrated
  • Base Product Number
    MAX2602
  • Current-Collector (Ic) (Max)
    1.2A
  • Package
    Tube
  • Emitter- Base Voltage VEBO
    2.3 V
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 85 C
  • DC Collector/Base Gain hfe Min
    100
  • Minimum Operating Temperature
    - 40 C
  • Mounting Styles
    SMD/SMT
  • Collector- Emitter Voltage VCEO Max
    17 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    85 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    6.4 W
  • Technology
    Si
  • Frequency
    900 MHz
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    900 MHz
  • Polarity
    NPN
  • Configuration
    Single
  • Max Supply Voltage

    In general, the absolute maximum common-mode voltage is VEE-0.3V and VCC+0.3V, but for products without a protection element at the VCC side, voltages up to the absolute maximum rated supply voltage (i.e. VEE+36V) can be supplied, regardless of supply voltage.

    3.6 V
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power - Max
    6.4W
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    1 GHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    17 V
  • Max Collector Current
    1.2 A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 250mA, 3V
  • Gain
    11.6 dB
  • Voltage - Collector Emitter Breakdown (Max)
    15V
  • Max Frequency
    1 GHz
  • Transition Frequency
    1 GHz
  • Frequency - Transition
    1GHz
  • Collector Base Voltage (VCBO)
    15 V
  • Emitter Base Voltage (VEBO)
    2.3 V
  • Continuous Collector Current
    200 mA
  • Noise Figure (dB Typ @ f)
    3.3dB @ 836MHz
  • Width
    3.99 mm
  • Height
    1.58 mm
  • Length
    4.98 mm
  • REACH SVHC
    Unknown
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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