BLP8G10S-45PGY

Ampleon USA Inc. BLP8G10S-45PGY

Part No:

BLP8G10S-45PGY

Manufacturer:

Ampleon USA Inc.

Datasheet:

BLP8G10S-45P(G)

Package:

4-BESOP (0.173, 4.40mm Width)

ROHS:

AINNX NO:

6093504-BLP8G10S-45PGY

Description:

RF FET LDMOS 65V 20.8DB 4BESOP

Products specifications
  • Factory Lead Time
    13 Weeks
  • Package / Case
    4-BESOP (0.173, 4.40mm Width)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    65V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2006
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Frequency
    952.5MHz~957.5MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BLP8G10
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-G4
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Current - Test
    224mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS (Dual), Common Source
  • Gain
    20.8dB
  • DS Breakdown Voltage-Min
    65V
  • Power - Output
    2.5W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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