MMBV2107LT1G

AMI Semiconductor MMBV2107LT1G

Part No:

MMBV2107LT1G

Manufacturer:

AMI Semiconductor

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

AINNX NO:

40843422-MMBV2107LT1G

Description:

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • RoHS
    Compliant
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.8 W
  • Diode Type
    Single
  • Drain to Source Voltage (Vdss)
    30 V
  • Continuous Drain Current (ID)
    4 A
  • Capacitance @ Vr, F
    24.2pF @ 4V, 1MHz
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    305 pF
  • Voltage - Peak Reverse (Max)
    30V
  • Rds On Max
    117 mΩ
  • Capacitance Ratio

    The amount of electric charge stored on a conductor to a difference in electric potential.

    3.2
  • Capacitance Ratio Condition

    Capacitance is the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. The capacitance C is the ratio of the amount of charge q on either conductor to the potential difference V between the conductors, or simply C = q/V.

    C2/C30
  • Q @ Vr, F
    350 @ 4V, 50MHz
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