FQD6N40TM

AMI Semiconductor FQD6N40TM

Part No:

FQD6N40TM

Manufacturer:

AMI Semiconductor

Datasheet:

-

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

AINNX NO:

40844474-FQD6N40TM

Description:

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    D-Pak
  • Voltage, Rating
    100 V
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Current - Continuous Drain (Id) @ 25℃
    4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    2.5W (Ta), 50W (Tc)
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    QFET®
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Tolerance
    0.1 %
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    100 ppm/°C
  • Resistance
    6.98 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    155 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Power Rating
    125 mW
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.15 Ohm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Drain to Source Voltage (Vdss)
    400V
  • Vgs (Max)
    ±30V
  • FET Feature
    -
  • Height
    650 µm
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