FJN4304RTA

AMI Semiconductor FJN4304RTA

Part No:

FJN4304RTA

Manufacturer:

AMI Semiconductor

Datasheet:

-

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

AINNX NO:

40844304-FJN4304RTA

Description:

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package
    TO-92-3
  • RoHS
    Non-Compliant
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Current-Collector (Ic) (Max)
    100mA
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    -
  • Tolerance
    0.1 %
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    25 ppm/°C
  • Resistance
    74.1 kΩ
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250 mW
  • Failure Rate

    the frequency with which an engineered system or component fails, expressed in failures per unit of time. It is usually denoted by the Greek letter λ (lambda) and is often used in reliability engineering.

    0.01 %
  • Power - Max
    300mW
  • Transistor Type
    PNP - Pre-Biased
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Frequency - Transition
    200MHz
  • Resistor - Base (R1)
    47 kOhms
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Features
    Military
  • Width
    1.6002 mm
  • Height
    838.2 µm
  • Length
    3.2004 mm
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