BCP53T1G

AMI Semiconductor BCP53T1G

Part No:

BCP53T1G

Manufacturer:

AMI Semiconductor

Datasheet:

-

Package:

TO-261-4, TO-261AA

AINNX NO:

40843991-BCP53T1G

Description:

Products specifications
  • Package / Case
    TO-261-4, TO-261AA
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    SOT-223
  • Voltage, Rating
    25 V
  • Other Names
    BCP53T1GOSTR
  • Current-Collector (Ic) (Max)
    1.5A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C ~ 150°C (TJ)
  • Tolerance
    0.25 %
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    25 ppm/°C
  • Resistance
    18 Ω
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    155 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Thin Film
  • Power Rating
    63 mW
  • Base Part Number
    BCP53
  • Power - Max
    1.5W
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Frequency - Transition
    50MHz
  • Height
    350 µm
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