AOK30B60D1

Alpha & Omega Semiconductor Inc. AOK30B60D1

Part No:

AOK30B60D1

Datasheet:

-

Package:

TO-247-3

ROHS:

AINNX NO:

5835364-AOK30B60D1

Description:

IGBT 600V 60A 208W TO247

Products specifications
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Collector-Emitter Breakdown Voltage
    600V
  • Test Conditions
    400V, 30A, 10 Ω, 15V
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    70 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Series
    Alpha IGBT™
  • Published
    2011
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    208W
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    208W
  • Input Type
    Standard
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    21 ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    120 ns
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 26A
  • Max Junction Temperature (Tj)
    150°C
  • Continuous Collector Current
    60A
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    34nC
  • Current - Collector Pulsed (Icm)
    96A
  • Td (on/off) @ 25°C
    20ns/58ns
  • Switching Energy
    1.1mJ (on), 240μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Height
    25.4mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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