APT5085BN

Advanced Power Technology APT5085BN

Part No:

APT5085BN

Datasheet:

Package:

-

AINNX NO:

69163355-APT5085BN

Description:

Power Field-Effect Transistor, 9.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    ADVANCED POWER TECHNOLOGY INC
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Drain Current-Max (ID)
    9.5 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Max (toff)
    70 ns
  • Turn-on Time-Max (ton)
    48 ns
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247AD
  • Drain-source On Resistance-Max
    0.85 Ω
  • Pulsed Drain Current-Max (IDM)
    38 A
  • DS Breakdown Voltage-Min
    500 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    180 W
  • Feedback Cap-Max (Crss)
    94 pF
  • Power Dissipation Ambient-Max
    180 W
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