APT5012JNU3

Advanced Power Technology APT5012JNU3

Part No:

APT5012JNU3

Package:

-

AINNX NO:

69176670-APT5012JNU3

Description:

Description: Power Field-Effect Transistor, 43A I(D), 1000V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    ADVANCED POWER TECHNOLOGY INC
  • Package Description
    FLANGE MOUNT, R-PUFM-D4
  • Drain Current-Max (ID)
    43 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    MOTOR DRIVE BUCK CONFIGURATION
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    SOLDER LUG
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PUFM-D4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.12 Ω
  • DS Breakdown Voltage-Min
    1000 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    520 W
  • Power Dissipation Ambient-Max
    520 W
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