AP3R303GMT-HF

Advanced Power Electronics Corp AP3R303GMT-HF

Part No:

AP3R303GMT-HF

Datasheet:

Package:

-

AINNX NO:

69076403-AP3R303GMT-HF

Description:

TRANSISTOR 31 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8, FET General Purpose Power

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    ADVANCED POWER ELECTRONICS CORP
  • Package Description
    SMALL OUTLINE, R-PDSO-F8
  • Drain Current-Max (ID)
    31 A
  • Moisture Sensitivity Levels
    3
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • JESD-30 Code
    R-PDSO-F8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0033 Ω
  • Pulsed Drain Current-Max (IDM)
    250 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    28.8 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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