ALD1115SAL

Advanced Linear Devices Inc. ALD1115SAL

Part No:

ALD1115SAL

Datasheet:

ALD1115

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6824484-ALD1115SAL

Description:

MOSFET N/P-CH 10.6V 8SOIC

Products specifications
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    0°C~70°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    2006
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    500mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500mW
  • FET Type
    N and P-Channel Complementary
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1800 Ω @ 5V
  • Vgs(th) (Max) @ Id
    1V @ 1μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3pF @ 5V
  • Drain to Source Voltage (Vdss)
    10.6V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Continuous Drain Current (ID)
    -2mA
  • Gate to Source Voltage (Vgs)
    13.2V
  • Drain-source On Resistance-Max
    500Ohm
  • Drain to Source Breakdown Voltage
    -12V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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