HF75-28F

Advanced HF75-28F

Part No:

HF75-28F

Manufacturer:

Advanced

Datasheet:

-

Package:

-

AINNX NO:

64669116-HF75-28F

Description:

Bipolar Transistors - BJT NPN SILICON RF POWER TRANSISTOR

Products specifications
  • Emitter- Base Voltage VEBO
    4 V
  • Pd - Power Dissipation
    140 W
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    10 at 1 A, 5 V
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Mounting Styles
    SMD/SMT
  • Gain Bandwidth Product fT
    30 MHz
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • DC Current Gain hFE Max
    100 at 1 A, 5 V
  • Collector- Emitter Voltage VCEO Max
    35 V
  • Subcategory
    Transistors
  • Technology
    Si
  • Configuration
    Single
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Collector Base Voltage (VCBO)
    60 V
  • Continuous Collector Current
    10 A
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
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