Transistors - Special Purpose
Manufacturer+1
Ihs Manufacturer
Part Life Cycle Code
Reach Compliance Code
Package Description
ECCN Code
Surface Mount
Drain Current-Max (ID)
FET Technology
Number of Elements
Number of Terminals
JESD-30 Code
Package Body Material
- 2SJ548
Power Field-Effect Transistor, 0.155ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK580L
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK2113YY-TL
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK439-F
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory4365
- MOQ1
- SPQ1
- H7N0312LM
Power Field-Effect Transistor, 85A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- PM50150K
Power Field-Effect Transistor, 0.08ohm, 1-Element, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK1952
Power Field-Effect Transistor, 0.028ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- BB301MAW-TR
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 3SK197WI
Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK1880S
Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory6500
- MOQ1
- SPQ1
- 2SJ186CYTR
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK3349
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, SMPAK-3
manufacturer: Hitachi Ltd
- Inventory36287
- MOQ1
- SPQ1
- PM45502C
Description: Power Field-Effect Transistor, 0.12ohm, 2-Element, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory455
- MOQ1
- SPQ1
- 2SK360IGDTL
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-3
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK312
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK2737
Description: Power Field-Effect Transistor, 0.025ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220CFM, 3 PIN
manufacturer: Hitachi Ltd
- Inventory1500
- MOQ1
- SPQ1
- 2SK1862
Power Field-Effect Transistor, 2.8ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK1832
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1