Transistors - Special Purpose
Manufacturer+1
Ihs Manufacturer
Part Life Cycle Code
Reach Compliance Code
Package Description
ECCN Code
Surface Mount
Drain Current-Max (ID)
FET Technology
Number of Elements
Number of Terminals
JESD-30 Code
Package Body Material
- 2SK1952
Power Field-Effect Transistor, 0.028ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- H7N0312LM
Power Field-Effect Transistor, 85A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- HAT3008RJ
Description: Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- BB301MAW-TR
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- PM45502C
Description: Power Field-Effect Transistor, 0.12ohm, 2-Element, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory455
- MOQ1
- SPQ1
- 2SK312
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK2426
Description: Power Field-Effect Transistor, 0.35ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220CFM, 3 PIN
manufacturer: Hitachi Ltd
- Inventory4
- MOQ1
- SPQ1
- 2SK3154
Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
manufacturer: Hitachi Ltd
- Inventory50000
- MOQ1
- SPQ1
- PM5050J
Power Field-Effect Transistor, 0.18ohm, 1-Element, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SJ363PY
Power Field-Effect Transistor, 2A I(D), 30V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK580L
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK2113YY-TL
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- PM50150K
Power Field-Effect Transistor, 0.08ohm, 1-Element, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK439-F
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory4365
- MOQ1
- SPQ1
- 3SK233XW
Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Hitachi Ltd
- Inventory21000
- MOQ1
- SPQ1
- 2SK1809
Power Field-Effect Transistor, 1.5ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1
- 2SK3207
Description: Power Field-Effect Transistor, 0.12ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
manufacturer: Hitachi Ltd
- InventoryIn Stock
- MOQ1
- SPQ1