68723734-RD02MUS1B
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
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MGFS45V2527A
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PINRD35HUF2
Mitsubishi ElectricRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8RD70HVF1C-501
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Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3MGFC36V5258
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN