Mitsubishi Electric MGF1923-01
69148984-MGF1923-01
Mitsubishi ElectricRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
In Stock : 4000
MOQ:1 SPQ:1Hot Sale
MGFS45V2527A
Mitsubishi ElectricDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PINRD02MUS1B
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10RD35HUF2
Mitsubishi ElectricRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8RD70HVF1C-501
Mitsubishi ElectricRF Power Field-Effect Transistor,RD04HMS2
Mitsubishi ElectricRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3