Samsung Semiconductor SSD2009
69164362-SSD2009
Samsung SemiconductorPower Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
In Stock : Please Inquiry
MOQ:1 SPQ:1Hot Sale
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Samsung SemiconductorPower Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
MMBTH10
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SSH6N55
Samsung SemiconductorPower Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINIRF9222
Samsung SemiconductorTransistor