SUMITOMO ELECTRIC Industries Ltd EGNB010MK
69084543-EGNB010MK
SUMITOMO ELECTRIC Industries LtdDescription: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
In Stock : Please Inquiry
MOQ:1 SPQ:1Hot Sale
FLM1213-4F
SUMITOMO ELECTRIC Device Innovations IncDescription: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PINEGNC105MK
SUMITOMO ELECTRIC Device Innovations IncDescription: TransistorSGFCF10S-DT1
SUMITOMO ELECTRIC Industries LtdRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PINFLM4450-18F
SUMITOMO ELECTRIC Device Innovations IncDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
FLK027XV
SUMITOMO ELECTRIC Industries LtdRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4