RF Micro Devices Inc FPD1050
69165040-FPD1050
RF Micro Devices IncRF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
In Stock : Please Inquiry
MOQ:1 SPQ:1Hot Sale
SP2030
RF Micro Devices IncPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,SLD3091FZ
RF Micro Devices IncDescription: Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, CERAMIC, LDMOS-3
FPD7612
RF Micro Devices IncRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
FPD1500SOT89
RF Micro Devices IncRF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PINFPD3000
RF Micro Devices IncDescription: RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE