69148750-SSH4N90AS
Samsung SemiconductorDescription: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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SSH25N40
Samsung SemiconductorPower Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINSSP4N80
Samsung SemiconductorDescription: Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSFS9530
Samsung SemiconductorPower Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINSSP10N60A
Samsung SemiconductorDescription: Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINSSH6N55
Samsung SemiconductorPower Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN