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Transistors - Special Purpose

126 Results

  • Manufacturer+1

  • Configuration

  • ECCN Code

  • Ihs Manufacturer

  • Part Life Cycle Code

  • Polarity/Channel Type

  • Reach Compliance Code

  • Surface Mount

  • Operating Temperature-Max

  • Power Dissipation-Max (Abs)

  • Package Description

  • Drain Current-Max (ID)

  • FET Technology

  • IRFWZ44A
    IRFWZ44A

    Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSH25N40
    SSH25N40

    Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSR4N60A
    SSR4N60A

    Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • IRFZ12
    IRFZ12

    Description: Power Field-Effect Transistor, 8.3A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSR2N60
    SSR2N60

    Description: Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MJD29
    MJD29

    Description: Transistor

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSW2N60A
    SSW2N60A

    Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSW50N06
    SSW50N06

    Description: Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSH4N60
    SSH4N60

    Power Field-Effect Transistor, 4A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • IRF721
    IRF721

    Power Field-Effect Transistor, 3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSH10N60
    SSH10N60

    Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SFR9210
    SFR9210

    Power Field-Effect Transistor, 1.6A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSD2004
    SSD2004

    Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • IRFP242
    IRFP242

    Description: Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSH10N80
    SSH10N80

    Power Field-Effect Transistor, 10A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MJD29C
    MJD29C

    Transistor

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • IRF622
    IRF622

    Description: Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SFM9120
    SFM9120

    Transistor

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSD2003TF
    SSD2003TF

    -

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SSS6N55
    SSS6N55

    Description: Power Field-Effect Transistor, 3.2A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

    manufacturer: Samsung Semiconductor

    • InventoryIn Stock
    • MOQ1
    • SPQ1