Transistors - Special Purpose
Manufacturer+1
Configuration
ECCN Code
Ihs Manufacturer
Part Life Cycle Code
Polarity/Channel Type
Reach Compliance Code
Surface Mount
Operating Temperature-Max
Power Dissipation-Max (Abs)
Package Description
Drain Current-Max (ID)
FET Technology
- SSH25N40
Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSP4N80
Description: Power Field-Effect Transistor, 4A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SFS9530
Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSP10N60A
Description: Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSH6N55
Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- IRFS9Z34
Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSS7N60
Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSD2009
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSR4N60A
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- IRFZ12
Description: Power Field-Effect Transistor, 8.3A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSD2106
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SFR9110
Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSR1N50
Description: Power Field-Effect Transistor, 1.2A I(D), 500V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- IRFS9520
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSH4N90AS
Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- SSH5N80A
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- SSH5N90A
Power Field-Effect Transistor, 5A I(D), 900V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
manufacturer: Samsung Semiconductor
- InventoryIn Stock
- MOQ1
- SPQ1