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Transistors - Special Purpose

4 Results

  • Manufacturer+1

  • Configuration

  • DS Breakdown Voltage-Min

  • Drain Current-Max (ID)

  • ECCN Code

  • FET Technology

  • Highest Frequency Band

  • Ihs Manufacturer

  • JESD-30 Code

  • Number of Elements

  • Number of Terminals

  • Operating Mode

  • Package Body Material

  • KGF1256B
    KGF1256B

    RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, SOP-4

    manufacturer: OKI Electric Industry Co Ltd

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • KGF1312
    KGF1312

    Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3

    manufacturer: OKI Electric Industry Co Ltd

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • KGF1323F
    KGF1323F

    Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, 3PMMP, 3 PIN

    manufacturer: OKI Electric Industry Co Ltd

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • KGF1922
    KGF1922

    Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-3

    manufacturer: OKI Electric Industry Co Ltd

    • InventoryIn Stock
    • MOQ1
    • SPQ1