FUJITSU Semiconductor Limited FLL600IQ-3
69143797-FLL600IQ-3
FUJITSU Semiconductor LimitedRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
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FLM5964-8F
FUJITSU Semiconductor LimitedDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2FLM1414-12F
FUJITSU Semiconductor LimitedRF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2FLL200IB-2
FUJITSU Semiconductor LimitedRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2FLM5964-6F
FUJITSU Semiconductor LimitedDescription: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2FLL600IQ-3
FUJITSU Semiconductor LimitedRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET